Molecular Beam epitaxy – MBE

Molecular Beam Epitaxy (MBE) is a very precise deposition method for single crystal thin film growth. It can be used to deposit various materials, such as metals, semiconductors, magnetic materials, oxide and chalcogenide layers, organic molecules, and more. The growth takes place in a UHV chamber where source materials are evaporated and emitted onto a substrate. Temperature controller, shutters, beam flux monitor, mass analyzer and RHEED system (Reflection High-Energy Electron Diffraction) allow for in-situ monitoring and control of the evaporation and growth. The thickness of grown films ranges from single layers to several tens of nm.

• Sample manipulator with 360° rotation, +/- 8 mm x-/y-motion, 100 mm z-motion,
• sample heating up to 900 °C and upgradable for liquid nitrogen cooling,
• substrate size 10 mm x 10 mm,
• two evaporators and crucibles for evaporating Mo, W, Ta, and Nb,
• two effusion cells for deposition of S and Se. 

Equipment: Omicron Nanotechnology GmbH – LAB-10 MBE System

Responsible person: Dr. Yelyzaveta Chernolevska, yelyzaveta.chernolevska@ijs.si
Equipment location: basement in building B, Jožef Stefan Institute, Jamova 39, Ljubljana
Requested level of experience: to be discussed with responsible person
Equipment reservation: to be discussed with responsible person